GaInN-based tunnel junctions with graded layers

• Daiki Takasuka

• Yasuto Akatsuka

• Masataka Ino

• Norikatsu Koide

• Tetsuya Takeuchi

• Motoaki Iwaya

• Satoshi Kamiyama

• Isamu Akasaki

Abstract

We demonstrated low-resistivity GaInN-based tunnel junctions using graded GaInN layers. A systematic investigation of the samples grown by metalorganic vapor phase epitaxy revealed that a tunnel junction consisting of a 4 nm both-sides graded GaInN layer (Mg: 1 × 10 20 cm −3 ) and a 2 nm GaN layer (Si: 7 × 10 20 cm −3 ) showed the lowest specific series resistance of 2.3 × 10 −4 Ω cm 2 at 3 kA/cm 2 in our experiment. The InN mole fraction in the 4 nm both-sides graded GaInN layer was changed from 0 through 0.4 to 0. The obtained resistance is comparable to those of standard p-contacts with Ni/Au and MBE-grown tunnel junctions.

Journal

• Applied Physics Express

  Applied Physics Express 9 (8), 081005-, 2016-07-22

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360565171312320384
• NII Article ID: 210000138004
• DOI: 10.7567/apex.9.081005
• ISSN: 18820786
• ISSN: 18820778
• ISSN: http://id.crossref.org/issn/18820786
• Web Site: http://stacks.iop.org/1882-0786/9/i=8/a=081005/pdf
• Web Site: http://stacks.iop.org/1882-0786/9/i=8/a=081005?key=crossref.6d6732a80de0688eac7b8a9a62d0e374
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.9.081005
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.9.081005/pdf
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