Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding

• Ryo Osabe

• Tadashi Okumura

• Simon Kondo

• Nobuhiko Nishiyama

• Shigehisa Arai

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (8R), 088005-, 2011-08-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

Details

• CRID: 1360003449885193088
• NII Article ID: 210000139428
• DOI: 10.7567/jjap.50.088005
• ISSN: 13474065
• ISSN: 00214922
• Data Source:
  • Crossref
  • CiNii Articles