Experimental Analysis of Within-Die Process Variation in 65 and 180 nm Complementary Metal–Oxide–Semiconductor Technology Including Its Distance Dependences

• Tania Ansari

• Wataru Imafuku

• Masahiro Yasuda

• Hans Jürgen Mattausch

• Tetsushi Koide

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 51 (4S), 04DE03-, 2012-04-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1360566399839054976
• NII論文ID: 210000140514
• DOI: 10.7567/jjap.51.04de03
• ISSN: 13474065
• ISSN: 00214922
• データソース種別:
  • Crossref
  • CiNii Articles