GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Barriers for Ultrafast All-Optical Switches

Access this Article

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 51(4S), 04DG06-04DG06, 2012-04-01

    IOP Publishing

Codes

  • NII Article ID (NAID)
    210000140532
  • ISSN
    0021-4922
  • Data Source
    Crossref 
Page Top