Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

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Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 51(9R), 090114-090114, 2012-09-01

    IOP Publishing

Codes

  • NII Article ID (NAID)
    210000141158
  • ISSN
    0021-4922
  • Data Source
    Crossref 
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