Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

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Details 詳細情報について

  • CRID
    1360566399839308800
  • NII Article ID
    210000141158
  • DOI
    10.7567/jjap.51.090114
  • ISSN
    13474065
    00214922
    http://id.crossref.org/issn/00214922
    http://id.crossref.org/issn/13474065
  • Data Source
    • Crossref
    • CiNii Articles

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