Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 51 (9R), 090114-, 2012-09-01
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360566399839308800
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- NII Article ID
- 210000141158
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/00214922
- http://id.crossref.org/issn/13474065
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- Data Source
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- Crossref
- CiNii Articles