Design of Spin Polarization Analyzer using Transverse-Longitudinal Correlation in Resistivities Induced by Spin–Orbit Interaction

• Masamichi Sakai

• Koichi Kakizaki

• Shigehiko Hasegawa

• Akira Kitajima

• Akihiro Oshima

• Hiroyuki Awano

Abstract

We have theoretically studied a methodology for the measurement of the degree of spin polarization ( P ) in metals as well as semiconductors. Our principle is based on the correlation existing between transverse resistivity (ρ y x ) and longitudinal resistivity (ρ x x ), both influenced by transverse scattering due to a spin–orbit interaction (SOI) as well as longitudinal scattering due to usual mechanisms. Our spin polarization analyzer employs an unknown polarization conductor as a source electrode from which spin-polarized electrons are injected into a nonmagnetic (NM) channel region. The channel length is set to be much smaller than its spin diffusion length so that ρ y x and ρ x x in the NM region, both complementarily influenced by carrier spin polarization, would be measured to obtain the P value. Also, application to OR and XOR logic gates are discussed on the basis of our spin polarization analyzer.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (1R), 013004-, 2012-12-25

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360003449886144000
• NII Article ID: 210000141733
• DOI: 10.7567/jjap.52.013004
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.013004
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.013004/pdf
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