High Amount Cluster Incorporation in Initial Si Film Deposition by SiH₄ Plasma Chemical Vapor Deposition

• Yeonwon Kim

• Kosuke Hatozaki

• Yuji Hashimoto

• Giichiro Uchida

• Kunihiro Kamataki

• Naho Itagaki

• Hyunwoong Seo

• Kazunori Koga

• Masaharu Shiratani

Abstract

We have carried out in-situ measurements of Si cluster volume fraction in Si films during plasma chemical vapor deposition by using quartz crystal microbalances (QCM's) together with a cluster-eliminating filter. The cluster volume fraction in films is deduced from film deposition rates with and without Si clusters using QCM's. By employing this method we have revealed a depth profile of the Si cluster volume fraction. A high cluster volume fraction is observed in the initial phase of film deposition. This behavior is compared with time evolution of SiH * , Si * emission intensities and their intensity ratio.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (1S), 01AD01-, 2013-01-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360003449886192384
• NII Article ID: 210000141764
• DOI: 10.7567/jjap.52.01ad01
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.01AD01
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.01AD01/pdf
• Data Source:
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  • CiNii Articles
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