Development of the Hybrid Conjugated Polymer Solar Cell Based on GaN Quantum Dots

• Minji Kim

• Min Jeong Shin

• Dongoh Gwon

• Hyung Soo Ahn

• Sam Nyung Yi

• Pan Seok Kim

• Sung Cheol Yoon

• Changjin Lee

• Jungsik Park

• Keesam Shin

• Dong Han Ha

• Nobuhiko Sawaki

抄録

We report the hybrid p–n junction based on GaN quantum dots (QDs) as an electron transport layer and poly(3-hexylthiophene-2,5-diyl) (P3HT) as a hole transport layer, which has not been tried for the solar cell until now. The growth of GaN QDs was achieved by the hydride vapor phase epitaxy (HVPE) technique and P3HT film sequentially was coated on the top of QDs. The overall performance of P3HT/GaN QDs hybrid heterojunction was analyzed by current density–voltage ( J – V ) characteristics and finally exhibited an open-circuit voltage, short-circuit current density, and fill factor of 160 mV, 3.6 mA/cm 2 , and 0.25, respectively. Also, its efficiency was shown up to 0.14% in an active area of 0.04 cm 2 under AM1.5G illumination with an intensity of 100 mW cm -2 . In this paper, we discuss the factors which affect the power conversion efficiency for future works.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (1S), 01AD02-, 2013-01-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360284924862903552
• NII論文ID: 210000141765
• DOI: 10.7567/jjap.52.01ad02
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.01AD02
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.01AD02/pdf
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