Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources

• Fumitsugu Fukuyo

• Shunsuke Ochiai

• Hideto Miyake

• Kazumasa Hiramatsu

• Harumasa Yoshida

• Yuji Kobayashi

Abstract

The structure of Si-doped AlGaN multiple quantum well (MQW) targets has been optimized for application to electron-beam (EB)-pumped deep-ultraviolet (UV) light sources. The deep-UV light emission from Si-doped AlGaN MQW targets pumped by a 10 kV EB has been evaluated. The targets exhibited a deep-UV light output power of over 15 mW at a peak wavelength of 256 nm for an EB input power of 2.0 W, and the conversion efficiency was estimated to be over 0.75%. These results demonstrate the advantageousness of using p-type-AlGaN-free AlGaN MQW targets as a material for application to EB-pumped deep-UV light sources.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (1S), 01AF03-, 2013-01-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360846646289230080
• NII Article ID: 210000141776
• DOI: 10.7567/jjap.52.01af03
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.01AF03
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.01AF03/pdf
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