Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors

• Yusuke Shika

• Takuro Bessho

• Yasunori Okabe

• Hiroyuki Ogata

• Shinya Kamo

• Kuninori Kitahara

• Akito Hara

抄録

We investigated hydrogenation of low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) from the point of view of the gettering phenomenon, specifically, using self-aligned metal double-gate p-channel LT poly-Si TFTs that had a small subthreshold swing value and a high field-effect mobility. Hydrogenation of TFTs was carried out by forming gas annealing. Our results indicate that the conventionally used hydrogenation temperature of 400 °C is considerably high because annealing at this temperature results in the re-emission of gettered hydrogen. Moreover, when annealing in forming gas, hydrogenation actually occurs during cooling from 400 °C, but not at 400 °C. The most important parameter for effective hydrogenation is the rate of cooling from 400 °C, but not the hydrogenation temperature of 400 °C.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (3S), 03BB01-, 2013-03-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360566399839821824
• NII論文ID: 210000141907
• DOI: 10.7567/jjap.52.03bb01
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.03BB01
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.03BB01/pdf
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