Epitaxial Growth of ZnTe Layers on ZnO Bulk Substrates by Metalorganic Vapor Phase Epitaxy
抄録
<jats:p>The crystallinity and surface roughness of ZnTe epilayers grown on (0001) ZnO bulk substrates by metal organic vapor phase epitaxy are investigated. X-ray diffraction, Raman spectra, photoluminescence, and atomic force microscopy analysis results prove that the crystallinity and surface roughness of ZnTe epilayers depend on epitaxial growth temperature. A high-crystal-quality (111) ZnTe heteroepitaxial layer, with near-band-edge emission at 549 nm, was obtained at a substrate temperature of 460 °C.</jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 52 (4R), 040206-, 2013-03-25
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847874816563584
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- NII論文ID
- 210000141926
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- ISSN
- 13474065
- 00214922
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