Epitaxial Growth of ZnTe Layers on ZnO Bulk Substrates by Metalorganic Vapor Phase Epitaxy

• Hajime Akiyama

• Hiroyuki Hirano

• Katsuhiko Saito

• Tooru Tanaka

• Mitsuhiro Nishio

• Qixin Guo

Abstract

The crystallinity and surface roughness of ZnTe epilayers grown on (0001) ZnO bulk substrates by metal organic vapor phase epitaxy are investigated. X-ray diffraction, Raman spectra, photoluminescence, and atomic force microscopy analysis results prove that the crystallinity and surface roughness of ZnTe epilayers depend on epitaxial growth temperature. A high-crystal-quality (111) ZnTe heteroepitaxial layer, with near-band-edge emission at 549 nm, was obtained at a substrate temperature of 460 °C.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (4R), 040206-, 2013-03-25

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360847874816563584
• NII Article ID: 210000141926
• DOI: 10.7567/jjap.52.040206
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.040206
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.040206/pdf
• Data Source:
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  • CiNii Articles
  • KAKEN