Side-Illuminated Color Photosensor
Abstract
<jats:p> We have proposed a simple method for color imaging in which the photosensor is illuminated from the side. In this method, color imaging can be produced using single pixels and without generating false colors and moiré patterns. A 5.0 ×5.0 mm<jats:sup>2</jats:sup> test chip was fabricated using a 0.35 µm complementary metal oxide semiconductor (CMOS) 1-poly 4-metal process. Because the side illumination method is used, the side of the test chip was etched using a high-speed deep reactive ion etching (D-RIE) process. Light illumination experiments confirmed that four colors – blue, green, red, and near-infrared – could be separated using this method. We also estimated the color separation properties of a similar sensor based on a 0.18 µm CMOS process. </jats:p>
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 52 (4S), 04CE10-, 2013-03-21
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360003449886591360
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- NII Article ID
- 210000142040
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN