Organic Memory Transistors Using Monolayer of Semiconductor Colloidal Nano-Dots as a Floating Gate

• Kaori Kajimoto

• Daisuke Matsui

• Kazuyuki Uno

• Ichiro Tanaka

Abstract

We fabricated pentacene-based memory field-effect transistors (FETs) in which a monolayer of semiconductor colloidal nano-dots (NDs) is embedded as a floating gate. After a sufficiently large writing voltage was applied on the control gate, the fabricated FETs showed a large positive threshold voltage ( V th ) shift that was attributed to electrons trapped in embedded NDs. The V th shift was measured as a function of the writing voltage, and it was shown that the minimum writing voltage for memory FETs with small NDs is significantly larger than that for FETs with large ones. This result supports the proposed model of the memory effect in which electrons that tunneled from nearby pentacene molecules are trapped in embedded NDs because the electron energy level in small NDs is higher than that in large ones.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (5S1), 05DC04-, 2013-05-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360847874817006976
• NII Article ID: 210000142230
• DOI: 10.7567/jjap.52.05dc04
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.05DC04
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.05DC04/pdf
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  • CiNii Articles