Investigation of Hole Transporting Properties in Thin-Film and Single-Crystal Organic Field-Effect Transistor Based on Dinaphtho[2,1-b:1',2'-d]thiophene

• Katsumasa Nakahara

• Chikahiko Mitsui

• Toshihiro Okamoto

• Masakazu Yamagishi

• Junshi Soeda

• Kazumoto Miwa

• Hiroyasu Sato

• Akihito Yamano

• Takafumi Uemura

• Jun Takeya

Abstract

We describe physicochemical properties, crystal structures, and field-effect transistor performances of dinaphtho[2,1- b :1',2'- d ]thiophene (DNT-U) with a unique twisted structure. The HOMO energy level of DNT-U was estimated to be -5.77 eV by measurement of electrochemical property in solution, indicating that this material is a promising candidate for air-stable p-type organic semiconductors. DNT-U possesses anisotropic one-dimensional transfer integrals originating from the columnar face-to-face π-stacking motif, which was determined by X-ray single crystal structural analysis. In order to evaluate intrinsic hole transporting ability of DNT-U, we fabricated the single-crystal field-effect transistors (FETs). The devices showed hole mobility of up to 0.15 cm 2 V -1 s -1 , which value is almost one order of magnitude higher than that of the vacuum deposited thin film FETs.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (5S1), 05DC10-, 2013-05-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360003449886884992
• NII Article ID: 210000142236
• DOI: 10.7567/jjap.52.05dc10
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.05DC10
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.05DC10/pdf
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