Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer

• Katsushi Nishino

• Jun Nakauchi

• Kotaro Hayashi

• Masashi Tsukihara

抄録

AlN was grown by a sublimation method on 6H-SiC. We found the grown AlN layer is easily separated from the substrate when Si powder is added to the AlN source powder. The formation of AlSiN layer with the Si content of 15% at the AlN/6H-SiC interface was confirmed by energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). This AlSiN layer causes the separation of AlN.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (8S), 08JA07-, 2013-05-31

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847874817560320
• NII論文ID: 210000142592
• DOI: 10.7567/jjap.52.08ja07
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.08JA07
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.08JA07/pdf
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