In situ X-ray Reflectivity Measurements on Annealed In_xGa_1-xN Epilayer Grown by Metalorganic Vapor Phase Epitaxy

• Guangxu Ju

• Shingo Fuchi

• Masao Tabuchi

• Yoshikazu Takeda

Abstract

The thermal decomposition of c -plane GaN/sapphire templates was studied in a metalorganic vapor phase epitaxy (MOVPE) system installed in a laboratory-level X-ray diffractometer by using in situ X-ray reflectivity (XRR). GaN remained thermally stable in pure N 2 up to 900 °C, while a significant decomposition occurred at 950 °C. Then, thin In x Ga 1- x N epilayers were grown on the annealed templates at 830 °C. In situ XRR measurements were conducted before and after InGaN growth. By theoretical and experimental analyses of the XRR spectra, the sample structure change upon thermal annealing was clarified. Photoluminecescence (PL) and atomic force microscopy (AFM) results demonstrated that thermal annealing affected the optical properties and microstructures of InGaN films. The PL peaks from InGaN slightly blue-shifted with thermal annealing.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (8S), 08JB12-, 2013-05-31

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360566399840866432
• NII Article ID: 210000142606
• DOI: 10.7567/jjap.52.08jb12
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.08JB12
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.08JB12/pdf
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