Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy

• Satoshi Kurai

• Fumitaka Ushijima

• Yoichi Yamada

• Hideto Miyake

• Kazumasa Hiramatsu

Abstract

We have investigated the effects of Si doping on the microscopic optical inhomogeneity of Al 0.61 Ga 0.39 N epitaxial layers through the combined use of scanning electron microscopy (SEM) and cathodoluminescence (CL). Hexagonal hillocks and corresponding CL inhomogeneity in AlGaN epitaxial layers were observed in SEM and CL images, respectively, and the density of such structures increased with increasing the Si concentration. CL spectra of Si-doped AlGaN epitaxial layers taken at 80 K showed near-band-edge emission around 4.9 eV and an emission line around 4.4 eV. Monochromatic CL images of Si-doped AlGaN at the detection energy of 4.4 eV appeared selectively at the edges of hexagonal hillocks, indicating selective incorporation of Si atoms into defects at grain boundaries.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (8S), 08JL07-, 2013-05-20

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360003449887617792
• NII Article ID: 210000142732
• DOI: 10.7567/jjap.52.08jl07
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.08JL07
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.08JL07/pdf
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