Effects of Chemical Treatments and Ultrathin Al<sub>2</sub>O<sub>3</sub> Deposition on InAlN Surface Investigated by X-ray Photoelectron Spectroscopy

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Abstract

<jats:p> The effects of chemical treatments and Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> deposition on the InAlN surface were investigated by X-ray photoelectron spectroscopy (XPS). Independent of the extent of native oxide removal, the In 4d core-level binding energy was the same for untreated, HCl-treated, and HF-treated InAlN. This indicated a strong pinning tendency of the Fermi level at the InAlN bare surface. However, a 300 meV decrease in the In 4d binding energy was observed after atomic layer deposition (ALD) of Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, which indicated an increase in the negative surface potential at the InAlN surface. The reduction of positive charge at the InAlN surface is discussed. </jats:p>

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