Surface Modification of Poly(methyl methacrylate) by Hydrogen-Plasma Exposure and Its Sputtering Characteristics by Ultraviolet Light Irradiation
抄録
<jats:p> Surface modification of poly(methyl methacrylate) (PMMA) films by hydrogen-plasma exposure has been studied in the light of sputtering resistance of polymer-based materials in plasma etching processes. Surface measurements of PMMA were performed with X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, and spectroscopic ellipsometry. It has been found that oxygen atoms are preferentially removed from the surface when a PMMA film is subjected to hydrogen-plasma exposure, with the depth of modification being about 40 nm in the case we examined. Hydrogen-plasma exposure is also found to reduce the sputtering yields of PMMA by ultraviolet light irradiation, as in the case of Ar<jats:sup>+</jats:sup> ion irradiation [S. Yoshimura et al.: J. Vac. Soc. Jpn. 56 (2013) 129]. The results suggest that PMMA films become hardened and more sputtering resistant due to the formation of a thick (i.e., 40 nm in the case of this study) amorphous carbon layer by hydrogen-plasma exposure. Hydrogen-plasma exposure is thus an effective technique to increase etching resistance of polymer films. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 52 (9R), 090201-, 2013-08-06
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360003449887672832
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- NII論文ID
- 210000142776
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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