10 Gbps Operation of Top Air-Clad Lateral Junction Waveguide-Type Photodiodes

• Takahiko Shindo

• Takayuki Koguchi

• Mitsuaki Futami

• Kyouhei Doi

• Yoshiyuki Yamahara

• Jieun Lee

• Tomohiro Amemiya

• Nobuhiko Nishiyama

• Shigehisa Arai

Abstract

Toward on-chip photonic integrated circuits (PICs) based on a membrane structure, a lateral junction waveguide-type photodiode fabricated on semi-insulating (SI-) InP substrate was successfully demonstrated. A responsivity of 0.39 A/W was obtained by adopting a bulk GaInAs absorption layer. In addition, a narrow stripe width of 0.85 µm was chosen for the realization of high-speed operation. As a result, a 3 dB bandwidth of 8.8 GHz at a bias voltage of -2 V was attained for a device length of 380 µm, and a clear eye opening was obtained up to 10 Gbps.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (11R), 118002-, 2013-10-29

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360847874818286848
• NII Article ID: 210000143086
• DOI: 10.7567/jjap.52.118002
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.118002
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.118002/pdf
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