Highly Oriented Polymer Field-Effect Transistors with High Electrical Stability

• Toshiyuki Endo

• Takashi Nagase

• Takashi Kobayashi

• Hiroyoshi Naito

抄録

Oriented polymer field-effect transistors (FETs) with a top-gate configuration have been fabricated using amorphous fluoropolymers as gate insulators. The oriented poly(9,9-dioctylfluorene- co -bithiophene) (F8T2) FETs exhibit a high mobility anisotropy of 13 and a high mobility of 0.043 cm 2 ·V -1 ·s -1 for charge transport parallel to the alignment direction. The temperature dependence of the mobility reveals small disorder in the oriented F8T2 microstructure at the interface with the fluoropolymer gate insulator. The transfer characteristics show no hysteresis or threshold voltage shift after applying a gate bias stress.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 52 (12R), 121601-, 2013-12-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847874818430464
• NII論文ID: 210000143162
• DOI: 10.7567/jjap.52.121601
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.121601
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.52.121601/pdf
• データソース種別:
  • Crossref
  • CiNii Articles
  • KAKEN