抄録
<jats:p> We have considered diamond-like carbon (DLC) graphitization by low-temperature annealing with a Ni catalyst, for MEMS usage with thick DLC films. For DLC films, annealing at 350–450 °C was effective for improving the <jats:italic>I</jats:italic>(D)/<jats:italic>I</jats:italic>(G) ratio of their Raman spectra, and their surface roughness was unaffected by the annealing temperature. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 52 (12R), 128005-, 2013-11-18
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360003449888365696
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- NII論文ID
- 210000143208
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- ISSN
- 13474065
- 00214922
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