Photovoltaic properties of Si-based quantum-dot-sensitized solar cells prepared using laser plasma in liquid

• Hiroki Kobayashi

• Pattarin Chewchinda

• Yasunori Inoue

• Hiroshi Funakubo

• Michikazu Hara

• Masaie Fujino

• Osamu Odawara

• Hiroyuki Wada

Abstract

The current–voltage characteristics of Si-based quantum-dot-sensitized solar cells (QDSSCs) were examined. Si nanoparticles were prepared using laser-induced plasma. Si wafer in ethanol was irradiated with a Nd:YAG second harmonic generation (SHG) laser beam. The prepared nanoparticles were identified by X-ray diffraction analysis and Raman spectroscopy. Particle size was measured by transmission electron microscopy (TEM). Highly crystalline Si nanoparticles were observed by TEM. Photoluminescence (PL) spectra of the Si nanoparticles were also measured. Two types of QDSSCs were produced. One included ethanol during the production of TiO 2 /Si nanoparticle layer on a transparent conductive oxide electrode because ethanol solution with dispersed Si nanoparticles was prepared by this method; the other type did not include ethanol. The photovoltaic properties of the former were significantly degraded; the latter maintained its good photovoltaic properties. The properties of the latter gradually improved during the measurements. In particular, current density was increased, which increased conversion efficiency. These phenomena are related to changes in Si nanoparticle surface conditions.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 53 (1), 010208-, 2013-12-16

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360284924865090688
• NII Article ID: 210000143220
• DOI: 10.7567/jjap.53.010208
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.010208
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.010208/pdf
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