Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

• Hiroki Sugiyama

• Atsushi Teranishi

• Safumi Suzuki

• Masahiro Asada

抄録

We report metal–organic vapor-phase epitaxy (MOVPE) growth of pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes (RTDs) on InP substrates for the first time. X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) observations reveal that a uniform strained InAs subwell is coherently grown in the double-barrier (DB) structure. The AlAs/InGaAs/InAs RTDs exhibit excellent current–voltage characteristics with a high peak current density ( J P ) of around 2 × 10 5 A/cm 2 and peak-to-valley ratio ( PVR ) of around 6. A comparison with control RTDs consisting of AlAs/In 0.8 Ga 0.2 As DB confirms the effectiveness of InAs subwell insertion for the improvement of PVR .

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 53 (3), 031202-, 2014-02-24

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360566399842107904
• NII論文ID: 210000143405
• DOI: 10.7567/jjap.53.031202
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.031202
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.031202/pdf
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