Control of Al₂O₃/InAlN interface by two-step atomic layer deposition combined with high-temperature annealing

• Takuma Nakano

• Masahito Chiba

• Masamichi Akazawa

Abstract

An attempt was made to control the Al 2 O 3 /InAlN interface by the phase change of the Al 2 O 3 layer formed by atomic layer deposition (ALD). The electrical properties of an InAlN metal–oxide–semiconductor (MOS) diode with a sufficiently thick ALD-Al 2 O 3 layer deteriorated following conventional postdeposition annealing (PDA) at 850 °C, which is sufficiently high for microcrystallization of the ALD-Al 2 O 3 layer. However, X-ray photoelectron spectroscopy showed no evidence of an interface disorder in the ultrathin ALD-Al 2 O 3 /InAlN structure annealed at 850 °C. Two-step ALD interrupted by annealing at 850 °C right after the formation of the initial ultrathin Al 2 O 3 layer improved the electrical properties of the MOS diode with reduced interface state density ( D it ) and leakage current. A weak crystallization of the ultrathin Al 2 O 3 layer was confirmed by transmission electron microscopy. Improvement of the interface disorder by high-temperature annealing is discussed as the origin of the D it reduction.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 53 (4S), 04EF06-, 2014-02-13

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360003449889022336
• NII Article ID: 210000143623
• DOI: 10.7567/jjap.53.04ef06
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.04EF06
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.04EF06/pdf
• Data Source:
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  • CiNii Articles
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