High-temperature characteristics and stability of Cu/diamond Schottky diodes

• Kenji Ueda

• Keita Kawamoto

• Hidefumi Asano

抄録

The high-temperature electrical characteristics and stability of Cu/diamond Schottky diodes were examined and compared with those of Schottky diodes using Ag and Ni electrodes. The Cu/diamond Schottky diodes exhibited clear rectification up to 700 °C, indicating that high-temperature operation is possible using these diodes. This is thought to be due to their large Schottky barrier height of ∼1.6 eV. The high-temperature stability of the Cu/diamond Schottky diodes was better than that for diodes using Ag or Ni, probably because of less interfacial reaction or interdiffusion between the Cu and diamond.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 53 (4S), 04EP05-, 2014-02-20

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360566399842579712
• NII論文ID: 210000143697
• DOI: 10.7567/jjap.53.04ep05
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.04EP05
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.04EP05/pdf
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