Suppression of reverse recovery surge voltage of silicon power diode by adjusting trap energy levels through local lifetime control

• Yusuke Yamashita

• Satoru Machida

• Takahide Sugiyama

抄録

To suppress the reverse recovery surge voltage of silicon power diodes, the effects of adjusting trap energy levels through local lifetime control were investigated by device simulation and theoretical analysis of the Shockley–Read–Hall (SRH) model. In general, local lifetime control techniques localize carrier traps at the anode side of a diode and optimize the carrier lifetime profile to suppress surge voltage. However, the suppression effect of a certain localized trap density distribution on surge voltage varies with a change in trap energy level, even if the trap density distribution is the same. It became clear that deep trap energy levels suppress surge voltage more than shallow trap energy levels at 1000 A/cm 2 or less. Thus, deep trap energy levels such as E t − E i = 0.0–0.2 eV are favorable for suppressing surge voltage in almost all power devices.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 53 (4S), 04EP14-, 2014-03-19

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360003449889171968
• NII論文ID: 210000143706
• DOI: 10.7567/jjap.53.04ep14
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.04EP14
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.04EP14/pdf
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