Amorphous silicon oxide passivation films for silicon heterojunction solar cells studied by hydrogen evolution

• Kazuyoshi Nakada

• Shinsuke Miyajima

• Makoto Konagai

抄録

The passivation mechanism of ultrathin (∼6 nm) a-SiO:H films was studied by effective lifetime measurements and thermal desorption spectroscopy. An extremely high effective lifetime and a low surface recombination velocity of 6.3 ms and 1.6 cm/s, respectively, were achieved after postannealing treatment. For samples with high lifetime, the low-temperature hydrogen effusion peak related to molecular hydrogen shifted to higher temperatures independently of passivation material, indicating that desorption temperature directly reflects the changes in surface passivation. The same trend was observed for the high-temperature peak related to atomic hydrogen effusion for samples passivated by a-SiO:H. Additionally, when compared with a-Si:H, the high-temperature peak for a-SiO:H shifted to higher temperatures owing to O backbonding. Moreover, it was found that the FWHM of desorption peaks increased owing to the convoluted desorption from different Si 3− n O n –Si–H ( n = 0, 1, 2, and 3) configurations.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 53 (4S), 04ER13-, 2014-03-10

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847874819329920
• NII論文ID: 210000143722
• DOI: 10.7567/jjap.53.04er13
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.04ER13
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.04ER13/pdf
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