Etching of pentacene film using atomic hydrogen generated on heated tungsten

• Akira Heya

• Naoto Matsuo

Abstract

An etching method for organic semiconductor materials called atomic hydrogen treatment was investigated. In this method, the high-density atomic hydrogen is generated on a heated tungsten surface by a catalytic cracking reaction. Also pentacene films are etched at 0.07 nm/s in tungsten temperature of 1700 °C and sample holder of 60 °C. It is considered that the patterning of organic films using atomic hydrogen at low temperatures without plasma damage is useful for the realization of flexible semiconductor devices.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 53 (5), 058002-, 2014-04-07

  IOP Publishing

Details

• CRID: 1360565171312681856
• NII Article ID: 210000143761
• DOI: 10.7567/jjap.53.058002
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.058002
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.058002/pdf
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