Cathodoluminescence spectra of Ga–In–O polycrystalline films fabricated by molecular precursor method

• Takeyoshi Onuma

• Taihei Yasuno

• Soichiro Takano

• Ryousuke Goto

• Shuhei Fujioka

• Takumi Hatakeyama

• Takuto Oda

• Hiroki Hara

• Chihiro Mochizuki

• Hiroki Nagai

• Tomohiro Yamaguchi

• Mitsunobu Sato

• Tohru Honda

Abstract

Cathodoluminescence (CL) spectra were measured from polycrystalline Ga–In–O (GIO) films prepared by the molecular precursor method (MPM). Bandgap-energy ( E g ) and conductivity were successfully controlled by changing in the mixing ratio of the Ga and In precursor solutions. Although none of the films exhibited a near-band-edge emission, their CL emissions exhibited energy shifts by reflecting changes in E g and ligand field in the GIO alloys. The results indicate a practical use of MPM-grown GIO films for deep ultraviolet optoelectronic devices.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 53 (5S1), 05FF02-, 2014-03-20

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360566399842732544
• NII Article ID: 210000143831
• DOI: 10.7567/jjap.53.05ff02
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.05FF02
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.53.05FF02/pdf
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN