Bias dependent potential distribution of a Pt/HfO2/SiO2/Si gate structure obtained from a bias application in hard X-ray photoelectron spectroscopy

Access this Article

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 53(5S1), 05FH05-05FH05, 2014-04-14

    Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    210000143843
  • ISSN
    0021-4922
  • Data Source
    Crossref 
Page Top