Selective-area growth of GaN on non- and semi-polar bulk GaN substrates

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Abstract

<jats:p>We carried out the selective-area growth of GaN and fabricated InGaN/GaN MQWs on non- and semi-polar bulk GaN substrates by MOVPE. The differences in the GaN structures and the In incorporation of InGaN/GaN MQWs grown on non- and semi-polar GaN substrates were investigated. In the case of selective-area growth, different GaN structures were obtained on <jats:inline-formula> <jats:tex-math><?CDATA $(20\bar{2}1)$?></jats:tex-math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="MR13078if001.gif" xlink:type="simple" /> </jats:inline-formula> GaN, <jats:inline-formula> <jats:tex-math><?CDATA $(20\bar{2}\bar{1})$?></jats:tex-math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="MR13078if002.gif" xlink:type="simple" /> </jats:inline-formula> GaN, and <jats:inline-formula> <jats:tex-math><?CDATA $(10\bar{1}0)$?></jats:tex-math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="MR13078if003.gif" xlink:type="simple" /> </jats:inline-formula> GaN substrates. A repeating pattern of <jats:inline-formula> <jats:tex-math><?CDATA $\{ 1\bar{1}01\} $?></jats:tex-math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="MR13078if004.gif" xlink:type="simple" /> </jats:inline-formula> and <jats:inline-formula> <jats:tex-math><?CDATA $\{ 1\bar{1}0\bar{1}\} $?></jats:tex-math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="MR13078if005.gif" xlink:type="simple" /> </jats:inline-formula> facets appeared on <jats:inline-formula> <jats:tex-math><?CDATA $(20\bar{2}1)$?></jats:tex-math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="MR13078if006.gif" xlink:type="simple" /> </jats:inline-formula> GaN. Then, we fabricated InGaN/GaN MQWs on the facet structures on <jats:inline-formula> <jats:tex-math><?CDATA $(20\bar{2}1)$?></jats:tex-math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="MR13078if007.gif" xlink:type="simple" /> </jats:inline-formula> GaN. The emission properties characterized by cathodoluminescence were different for <jats:inline-formula> <jats:tex-math><?CDATA $\{ 1\bar{1}01\} $?></jats:tex-math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="MR13078if008.gif" xlink:type="simple" /> </jats:inline-formula> and <jats:inline-formula> <jats:tex-math><?CDATA $\{ 1\bar{1}0\bar{1}\} $?></jats:tex-math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="MR13078if009.gif" xlink:type="simple" /> </jats:inline-formula> facets. On the other hand, for InGaN/GaN MQWs on non- and semi-polar GaN substrates, steps along the <jats:italic>a</jats:italic>-axis were observed by AFM. In particular on <jats:inline-formula> <jats:tex-math><?CDATA $(20\bar{2}1)$?></jats:tex-math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="MR13078if010.gif" xlink:type="simple" /> </jats:inline-formula> GaN, undulations and undulation bunching appeared. Photoluminescence characterization indicated that In incorporation increased with the off-angle from the <jats:italic>m</jats:italic>-plane and also depended on the polarity.</jats:p>

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