MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer

• Masayoshi Katagiri

• Hao Fang

• Hideto Miyake

• Kazumasa Hiramatsu

• Hidehiko Oku

• Hidetoshi Asamura

• Keisuke Kawamura

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 53 (5S1), 05FL09-, 2014-04-25

  IOP Publishing

Keywords

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

Details

• CRID: 1360283696335981696
• NII Article ID: 210000143869
• DOI: 10.7567/jjap.53.05fl09
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: http://stacks.iop.org/1347-4065/53/i=5S1/a=05FL09/pdf
• Web Site: http://stacks.iop.org/1347-4065/53/i=5S1/a=05FL09?key=crossref.03c78e7d8903ce404887993bdaca807c
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN