Carrier generation mechanism and effect of tantalum-doping in transparent conductive amorphous SnO<sub>2</sub>thin films
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 53 (5S1), 05FX04-, 2014-04-14
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360847874819532928
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- NII Article ID
- 210000143922
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN