Relationship between source/drain-contact structures and switching characteristics in oxide-channel ferroelectric-gate thin-film transistors

Access this Article

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 53(9S), 09PA07-09PA07, 2014-09-01

    IOP Publishing

Codes

  • NII Article ID (NAID)
    210000144476
  • ISSN
    0021-4922
  • Data Source
    Crossref 
Page Top