Relationship between source/drain-contact structures and switching characteristics in oxide-channel ferroelectric-gate thin-film transistors

• Ken-ichi Haga

• Yuuki Nakada

• Dan Ricinschi

• Eisuke Tokumitsu

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 53 (9S), 09PA07-, 2014-09-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1360847874819776512
• NII論文ID: 210000144476
• DOI: 10.7567/jjap.53.09pa07
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/53/i=9S/a=09PA07/pdf
• Web Site: http://stacks.iop.org/1347-4065/53/i=9S/a=09PA07?key=crossref.c51f1c4ed4097b1e6266a86f28ba82b9
• データソース種別:
  • Crossref
  • CiNii Articles
  • KAKEN