Effects of HCl treatment and predeposition vacuum annealing on Al₂O₃/GaSb/GaAs metal–oxide–semiconductor structures

• Takahiro Gotow

• Sachie Fujikawa

• Hiroki I. Fujishiro

• Mutsuo Ogura

• Tetsuji Yasuda

• Tatsuro Maeda

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 54 (2), 021201-, 2015-01-19

  IOP Publishing

Keywords

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

Details

• CRID: 1360284924866469760
• NII Article ID: 210000144768
• DOI: 10.7567/jjap.54.021201
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/54/i=2/a=021201/pdf
• Web Site: http://stacks.iop.org/1347-4065/54/i=2/a=021201?key=crossref.c444d0398953cbf501acce1f4955b4dd
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN