Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 54 (4S), 04DA02-, 2015-02-17
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360003449889838976
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- NII論文ID
- 210000144949
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- ISSN
- 13474065
- 00214922
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- データソース種別
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