Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy

• Manvi Agrawal

• K. Radhakrishnan

• Nethaji Dharmarasu

• Stevin Snellius Pramana

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 54 (6), 065701-, 2015-05-19

  IOP Publishing

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1360566399843379072
• NII論文ID: 210000145204
• DOI: 10.7567/jjap.54.065701
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/54/i=6/a=065701/pdf
• Web Site: http://stacks.iop.org/1347-4065/54/i=6/a=065701?key=crossref.03c8e1ff0d2b77f60a7c5b5e76562bef
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