Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass

• Muneki Akazawa

• Kohei Sakaike

• Seiichiro Higashi

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 54 (8), 086503-, 2015-07-02

  IOP Publishing

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1360566399843510784
• NII論文ID: 210000145520
• DOI: 10.7567/jjap.54.086503
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/54/i=8/a=086503/pdf
• Web Site: http://stacks.iop.org/1347-4065/54/i=8/a=086503?key=crossref.20ddc2d6e40aeac024d5af1e3aef5e7f
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