Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents

• Atsushi Horio

• Shunta Harada

• Daiki Koike

• Kenta Murayama

• Kenta Aoyagi

• Takenobu Sakai

• Miho Tagawa

• Toru Ujihara

抄録

We report on the relationship between grown polytypes and the activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents. From the thermodynamic calculation as well as crystallization experiments, we revealed that a high activity ratio ( a Si / a C ) in the solution leads to the growth of low-hexagonality polytypes, and low a Si / a C results in the growth of high-hexagonality polytypes. 4H-SiC is stable when a Si / a C is relatively low (∼10 1 > a Si / a C ), 3C-SiC is stable when a Si / a C is relatively high (∼10 4 < a Si / a C ), and 6H-SiC is stable in the intermediate a Si / a C range (∼10 2 < a Si / a C < ∼10 3 ). From these results, the Cr–Si solvent at high temperatures is expected to be suitable for 4H-SiC growth, and Sc–Si and Fe–Si solvents at relatively low temperatures are expected to be suitable for 3C-SiC growth.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (1S), 01AC01-, 2015-10-27

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847874820413184
• NII論文ID: 210000145949
• DOI: 10.7567/jjap.55.01ac01
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.01AC01
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.01AC01/pdf
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