Excitation area dependence of lasing modes in thin hexagonal GaN microdisks

• Tetsuya Kouno

• Masaru Sakai

• Katsumi Kishino

• Kazuhiko Hara

Abstract

Thin, hexagonal GaN microdisks act as optical microcavities based on the whispering gallery mode (WGM) and the quasi-WGM that can cause lasing action. We investigated the relationship between the excitation area in regular and asymmetric thin, hexagonal GaN microdisks as well as the characteristics of these lasing modes using a room temperature photoluminescence mapping technique under high-excitation conditions. The lasing modes that are preferentially exhibited in a thin asymmetric hexagonal GaN microdisk were found to depend on the most strongly excited area in the microdisk. This behavior is potentially useful for optical micro switches and similar applications.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (1S), 01AC03-, 2015-10-29

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360566399843702912
• NII Article ID: 210000145951
• DOI: 10.7567/jjap.55.01ac03
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.01AC03
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.01AC03/pdf
• Data Source:
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  • CiNii Articles
  • KAKEN