Effect of N<sub>2</sub>O-doped buffer layer on the optical properties of ZnO films grown on glass substrates using high-energy H<sub>2</sub>O generated by catalytic reaction
Abstract
<jats:title>Abstract</jats:title> <jats:p>Improvement in the optical properties of ZnO films grown on glass substrates was investigated using a N<jats:sub>2</jats:sub>O-doped buffer layer inserted between the glass substrate and a ZnO film deposited by chemical vapor deposition (CVD). ZnO films were grown at 773 K using dimethylzinc (DMZn) and high-temperature H<jats:sub>2</jats:sub>O generated by catalytic reaction as zinc and oxygen sources, respectively. Crystal growth was enhanced for the ZnO film grown on the N<jats:sub>2</jats:sub>O-doped buffer layer, and the fluctuation in crystal orientation along the <jats:italic>c</jats:italic>-axis became less than that for a film grown directly on the glass substrate by CVD. The optical transmittance of the film in the wavelength range of 375–700 nm also increased with insertion of the buffer layer.</jats:p>
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 55 (2S), 02BC14-, 2016-01-08
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360847874820465024
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- NII Article ID
- 210000146083
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN