Organic crystal light-emitting transistors combined with a metal oxide layer

• Keiji Obara

• Shohei Higashihara

• Takeshi Yamao

• Shu Hotta

抄録

We improved organic light-emitting transistors (OLETs) characterized by aluminum-doped zinc oxide (AZO) layer insertion between organic and gate insulator layers using organic oligomer semiconductor crystals. (i) To ensure firm contact between the crystal and the AZO layer, we shaped the AZO layer into a rectangle (250 × 500 µm 2 ) and covered it with a vapor-phase-grown crystal. (ii) To enhance contact between the crystal and the AZO layer, we placed the crystal used as a mask on the patternless AZO layer and etched parts of AZO not covered with the crystal with hydrochloric acid vapor. We completed OLETs by forming electron- and hole-injection contacts on the crystal. We modified these contacts with an oxide and/or a carbonate. The devices showed bright light emission from the part of the crystal sandwiched between the electron- and hole-injection contacts located on the AZO layer.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (3S2), 03DC09-, 2016-02-12

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360566399843797888
• NII論文ID: 210000146184
• DOI: 10.7567/jjap.55.03dc09
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: http://stacks.iop.org/1347-4065/55/i=3S2/a=03DC09/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=3S2/a=03DC09?key=crossref.da867f9ec5ba5d2d837b7e084261f224
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.03DC09
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.03DC09/pdf
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