Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

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Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 55(4), 040306-040306, 2016-03-29

    IOP Publishing

Codes

  • NII Article ID (NAID)
    210000146222
  • ISSN
    0021-4922
  • Data Source
    Crossref 
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