Growth and characterization of indium-doped Zn₃P₂ bulk crystals

• Ryoji Katsube

• Hiroyuki Hayashi

• Akira Nagaoka

• Kenji Yoshino

• Yoshitaro Nose

• Yasuharu Shirai

抄録

In this paper, we report the crystal growth of indium-doped zinc phosphide bulk crystals to obtain n-type conduction. The crystal growth experiments were carried out by unidirectional solidification from In–Zn–P ternary solution, and n-type Zn 3 P 2 bulk crystals were successfully obtained. It was also revealed that the electrical properties of indium-doped Zn 3 P 2 crystals could be controlled by heat treatment under controlled partial pressure of phosphorus or zinc. The relationship between the electron concentration and the partial pressure of zinc or phosphorus even in indium-doped Zn 3 P 2 can be understood on the basis of defect equilibria, as in the case of undoped Zn 3 P 2 . However, the controllable range of the electron concentration was 10 10 –10 13 cm −3 , which was too low in terms of the concentration of doped indium. This is due to the low formation energy of the intrinsic acceptor, interstitial phosphorus, and carrier compensation should be discussed. According to recent reports on ab initio calculation, a weakly n-type Zn 3 P 2 is expected to be formed under extremely Zn-rich growth conditions. The results obtained in this study coincide with the prediction based on calculations, and provide useful knowledge for the formation of the p–n junction of Zn 3 P 2 .

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (4), 041201-, 2016-02-25

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847874820525312
• NII論文ID: 210000146224
• DOI: 10.7567/jjap.55.041201
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/55/i=4/a=041201/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=4/a=041201?key=crossref.bf0e34204da8cf47f9731f6d3d30a85f
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.041201
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.041201/pdf
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