Formation of Ge oxide film by neutral beam postoxidation using Al metal film
Abstract
<jats:title>Abstract</jats:title> <jats:p>A low-temperature neutral beam postoxidation process using an aluminum (Al) metal film was used to obtain a high-quality germanium (Ge) oxide film. After the deposition of a 1-nm-thick Al film on a Ge substrate, the simultaneous oxidation of Al and Ge was carried out at 300 °C, and a Ge oxide film with 28.5% Ge dioxide (GeO<jats:sub>2</jats:sub>) content was realized by controlling the acceleration bias power of the neutral oxygen beam. We also confirmed that the fabricated Au/AlO<jats:italic> <jats:sub>x</jats:sub> </jats:italic>/GeO<jats:italic> <jats:sub>x</jats:sub> </jats:italic>/Ge/Al MOS gate structure shows an equivalent oxide thickness (EOT) of 2.8 nm. This result demonstrates the great potential of neutral beam postoxidation for fabricating high-performance Ge MOS transistors.</jats:p>
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 55 (4S), 04EJ03-, 2016-02-25
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360566399843871360
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- NII Article ID
- 210000146366
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN