Electronic properties and strain sensitivity of CVD-grown graphene with acetylene

• Meng Yang

• Shinichirou Sasaki

• Masato Ohnishi

• Ken Suzuki

• Hideo Miura

Abstract

Although many studies have shown that large-area monolayer graphene can be formed by chemical vapor deposition (CVD) using methane gas, the growth of monolayer graphene using highly reactive acetylene gas remains a big challenge. In this study, we synthesized a uniform monolayer graphene film by low-pressure CVD (LPCVD) with acetylene gas. On the base of Raman spectroscopy measurements, it was found that up to 95% of the as-grown graphene is monolayer. The electronic properties and strain sensitivity of the LPCVD-grown graphene with acetylene were also evaluated by testing the fabricated field-effect transistors (FETs) and strain sensors. The derived carrier mobility and gauge factor are 862–1150 cm 2 /(V·s) and 3.4, respectively, revealing the potential for high-speed FETs and strain sensor applications. We also investigated the relationship between the electronic properties and the graphene domain size.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 55 (4S), 04EP05-, 2016-03-09

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360284924867181056
• NII Article ID: 210000146412
• DOI: 10.7567/jjap.55.04ep05
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/55/i=4S/a=04EP05/pdf
• Web Site: http://stacks.iop.org/1347-4065/55/i=4S/a=04EP05?key=crossref.5201354516c851d568053c2359d140aa
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.04EP05
• Web Site: https://iopscience.iop.org/article/10.7567/JJAP.55.04EP05/pdf
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